High withstand voltage semiconductor device

Details High withstand voltage semiconductor device High withstand voltage semiconductor device

1996-03-12

1999-10-19

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257493, 257495, 257170, 257173, H01L 2358

Patent

active

059694009

ABSTRACT:
A semiconductor device includes a first semiconductor layer of a first conductivity type having first and second main surfaces, a second semiconductor layer of a second conductivity type selectively formed on the first main surface of the first semiconductor layer, the second semiconductor layer including a first region having a relatively high injection efficiency and a second region having a relatively low injection efficiency and the first region being surrounded by the second region, a third semiconductor layer of the first conductivity type formed on the second main surface of the first semiconductor layer, a first electrode selectively formed on the second semiconductor layer of the second conductivity type and connected to at least the first region, and a second electrode formed on the third semiconductor layer of the first conductivity type.

REFERENCES:
patent: 4377816 (1983-03-01), Sittig
patent: 5101244 (1992-03-01), Mori et al.
patent: 5162876 (1992-11-01), Kitagawa et al.

Affiliated with

Also associated with

Rating

High withstand voltage semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High withstand voltage semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High withstand voltage semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2059411