Junction-isolated high-voltage MOS integrated device

Details Junction-isolated high-voltage MOS integrated device Junction-isolated high-voltage MOS integrated device

1993-04-15

1995-07-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257409, 257490, 257494, H01L 2941, H01L 29772

Patent

active

054344450

ABSTRACT:
An integrated device includes isolating regions of a first type of conductivity, each surrounding an epitaxial pocket of an opposite type of conductivity, and housing drain and source regions, and covered with an oxide layer housing gate regions and over which extend the source, drain and gate connections. For linearizing potential distribution at the epitaxial pocket-isolating region junction and close to the source regions beneath the connections, these regions are provided with a double chain of condensers embedded in the oxide layer and the terminal elements and the intermediate element of which are biased to predetermined potentials.

REFERENCES:
patent: 4947232 (1990-08-01), Ashida et al.
patent: 4958210 (1990-09-01), Krishna et al.
patent: 5204545 (1993-02-01), Terashima

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