Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2005-02-28
2010-02-16
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S493000, C257SE27060
Reexamination Certificate
active
07663203
ABSTRACT:
In a high-voltage PMOS transistor having an insulated gate electrode (18), a p-conductive source (15) in an n-conductive well (11), a p-conductive drain (14) in a p-conductive well (12) which is arranged in the n-conductive well, and having a field oxide area (13) between the gate electrode and drain, the depth (A′-B′) of the n-conductive well underneath the drain (14) is less than underneath the source (15), and the depth (A′-B′) of the p-conductive well is greatest underneath the drain (14).
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Austriamicrosystems AG
Cohen Pontani Lieberman & Pavane LLP
Lee Eugene
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