4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With means to increase breakdown voltage threshold
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Edge termination for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Reexamination Certificate

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Edge termination structure

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...
Patent

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Effective shield structure for improving substrate isolation...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region
Reexamination Certificate

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Electrical contact and housing for use as an interface...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Reexamination Certificate

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Electrostatic discharge device integrated with pad

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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Electrostatic discharge protection circuit using a...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate

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