Integrated circuit with improved reverse bias breakdown

Details Integrated circuit with improved reverse bias breakdown Integrated circuit with improved reverse bias breakdown

1993-04-28

1994-12-13

James, Andrew W.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257488, 257492, 257493, 257520, 257524, H01L 2940

Patent

active

053731832

ABSTRACT:
A biasing method for and IC with enhanced reverse bias breakdown. A field plate covering the surface PN junction and extending laterally therefrom is biased to partially deplete the island under the field plate and the substrate supporting the island is biased to complete the total depletion of the island under the field plate, establishing a substantially merged vertical field at less than critical for avalanche. Because most of the charge is required to support the vertical component of the field, the rate of change in the horizontal component is small per unit of additional terminal voltage and the lateral extension of the field plate increases the breakdown voltage beyond the plane breakdown for a PN junction of a given doping profile. Vertically isolated conductive material filled trenches laterally abutting the island may be used to decrease the lateral electric field in the corner of the island if the lateral extension of the field plate results in undesirable high field strengths or if proximity to the island edge creates field strength problems with island contacts or interconnect conductors.

REFERENCES:
patent: 4608590 (1986-08-01), Hartman
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5241210 (1993-08-01), Nakagawa et al.

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