Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1995-12-26
1997-02-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257587, 257560, 257502, 257547, H01L 2944, H01L 2952
Patent
active
056061951
ABSTRACT:
A high-voltage bipolar transistor and fabrication method that comprises a shield electrode (or field-termination electrode) located between bond pads and underlying semiconductor material. The shield electrode is sandwiched between two isolating dielectric layers. High-voltage applied to the bond pad establishes an electric field between the bond pad and the shield electrode), preventing field penetration into and inversion of the underlying semiconductor material. Using this overlapping field-termination structure, low leakage current and high breakdown voltage is maintained in the transistor. The present overlapping field-termination structure provides an effective field termination underneath the bond pads, and because of its overlapping design, provides for a more compact transistor.
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Case Michael G.
Hooper William W.
Nguyen Chanh N.
Alkov Leonard A.
Crane Sara W.
Denson-Low Wanda K.
Hughes Electronics
Williams Alexander Oscar
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