Lateral DMOS transistor having reduced surface field

Details Lateral DMOS transistor having reduced surface field Lateral DMOS transistor having reduced surface field

2005-05-03

2005-05-03

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000, C257S343000

Reexamination Certificate

active

06888210

ABSTRACT:
In accordance with the present invention, a metal oxide semiconductor (MOS) transistor has a substrate of a first conductivity type. A drift region of a second conductivity type is formed over the substrate. A body region of the first conductivity type is formed in the drift region. A source region of the second conductivity is formed in the body region. A gate extends over a surface portion of the body region and overlaps each of the source region and the body region such that the surface portion of the body region forms a channel region of the transistor. A drain region of the second conductivity type is formed in the drift region. The drain region is laterally spaced from the source region a first predetermined distance. A first buried layer of the first conductivity type extends into the substrate and the drift region. The first buried layer laterally extends between the source and drain regions.

REFERENCES:
patent: 4300150 (1981-11-01), Colak

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