Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2006-05-23
2006-05-23
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S170000, C257S173000, C257S493000, C257S495000
Reexamination Certificate
active
07049675
ABSTRACT:
A high withstand voltage semiconductor device does not show any significant fall of its withstand voltage if the impurity concentration of the RESURF layer of a low impurity concentration semiconductor region thereof varies from the optimal level and/or influenced by the fixed electric charge. The device is produced by forming a ring-shaped high impurity concentration edge termination layer of a second conductivity type and a ring-shaped low impurity concentration RESURF layer of the second conductivity type on the front surface of a semiconductor layer of a first conductivity type carrying electrodes respectively on the opposite surfaces thereof along the outer edge of one of the electrodes, then forming an outer ring layer with an impurity concentration substantially as low as the RESURF layer concentrically outside the RESURF layer with a gap separating therebetween and subsequently forming an inner ring layer with an impurity concentration substantially as high as the edge termination layer concentrically inside the RESURF layer.
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patent: 5969400 (1999-10-01), Shinohe et al.
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Hatakeyama Tetsuo
Kinoshita Kozo
Shinohe Takashi
Kabushiki Kaisha Toshiba
Nelms David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Mai-Huong
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