Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2007-12-04
2007-12-04
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S496000, C257SE29009
Reexamination Certificate
active
10997484
ABSTRACT:
A technique of spreading current flowing in a semiconductor device comprising an electrode, a drift region adjacent to the electrode, a junction termination extension implant region in the drift region, and a current spreader adjacent to the junction termination extension implant region and the electrode. The current spreader is adapted to reduce current densities and electrostatic fields (preferably simultaneously) in an area connecting the electrode with the drift region. Moreover, the current spreader is adapted to spread current flowing from the electrode into the drift region. The semiconductor device further comprises an ohmic metal contact connected to the electrode and an implant pocket in the drift region, wherein the implant pocket is adapted for terminating electrostatic field lines in the semiconductor device. Preferably, the current spreader comprises an ohmic metal and the electrode comprises any of an anode and a cathode.
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Purvis Sue A.
Sandvik Benjamin P.
Stolarun Edward L.
United States of America as represented by the Secretary of the
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