Intergrated high-voltage resistor including field-plate layers

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

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Details

257489, 257536, 257620, 257630, H01L 2360, H01L 2364

Patent

active

055548784

ABSTRACT:
A high-voltage resistor integrated on a semiconductor substrate with opposite sign conductivity, and being of a type with one end connected to the substrate and another end connected to a lower electric potential than the substrate, further comprises at least one thin layer of the field plate type covering at least a section of the resistor.

REFERENCES:
patent: 4212025 (1980-07-01), Hirasawa et al.
patent: 4423433 (1983-12-01), Imaizumi et al.
patent: 4423434 (1983-12-01), Komatsu

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