Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1994-12-08
1996-09-10
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257489, 257536, 257620, 257630, H01L 2360, H01L 2364
Patent
active
055548784
ABSTRACT:
A high-voltage resistor integrated on a semiconductor substrate with opposite sign conductivity, and being of a type with one end connected to the substrate and another end connected to a lower electric potential than the substrate, further comprises at least one thin layer of the field plate type covering at least a section of the resistor.
REFERENCES:
patent: 4212025 (1980-07-01), Hirasawa et al.
patent: 4423433 (1983-12-01), Imaizumi et al.
patent: 4423434 (1983-12-01), Komatsu
Brown Peter Toby
Carlson David V.
CO. RI. M. ME.
Tegreene Clarence T.
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