LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,With means to increase breakdown voltage threshold

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Amorphous silicon combined with resurf region for termination fo

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...

Ballast resistors for transistor devices

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Base-emitter reverse bias protection for BICMOS IC

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Biasing of island-surrounding material to suppress reduction of

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Biasing of island-surrounding material to suppress reduction...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Bidirectional shallow trench superjunction device with...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region

Bipolar transistor with base drive circuit protection

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Body of a semiconductor material with a reduced mean free...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Breakdown diode structure

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

Breakdown improvement method and sturcture for lateral DMOS...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...

Compensation semiconductor component and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Composite controlled semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Composite controlled semiconductor device and power conversion d

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Coupling well structure for improving HVMOS performance

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Depletion region stopper for PN junction in silicon carbide

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

Device with a P-N junction and a means of reducing the risk of b

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Double-triggered silicon controlling rectifier and...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region

Doubly graded junction termination extension for edge...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region

Edge termination for semiconductor devices