Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2007-05-25
2010-02-09
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
Reexamination Certificate
active
07659596
ABSTRACT:
A semiconductor lateral voltage-sustaining region and devices based thereupon. The voltage-sustaining region is made by using the Metal-Insulator-Semiconductor capacitance formed by terrace field plate to emit or to absorb electric flux on the semiconductor surface, so that the effective electric flux density emitted from the semiconductor surface to the substrate approaches approximately the optimum distribution, and a highest breakdown voltage can be achieved within a smallest distance on the surface. The field plate(s) can be either connected to an electrode or floating ones, or connected to floating field limiting rings. Coupling capacitance between different plates can also be used to change the flux distribution.
REFERENCES:
patent: 6724021 (2004-04-01), Van Dalen et al.
patent: 6828645 (2004-12-01), Jimbo et al.
patent: 2004/0041237 (2004-03-01), Chen
Locke Lord Bissell & Liddell LLP
Nguyen Dao H
Nguyen Tram H
University of Electronic Science & Technology
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