Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...
Reexamination Certificate
2006-04-07
2008-11-11
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With electric field controlling semiconductor layer having a...
C257S279000, C257S287000
Reexamination Certificate
active
07449762
ABSTRACT:
A Lateral Epitaxial Gallium Nitride metal insulator semiconductor field effect transistor (LEGaN-MISFET) is described that includes a body region including at least one layer formed of Gallium Nitride having a first conductivity type formed on the substrate; a resurf layer of Gallium Nitride having a second conductivity type formed the body region; a source region in contact with the resurf layer; a drain region, in contact with the resurf layer and spaced apart from the source region; a gate metal insulator semiconductor (MIS) structure in contact with the body region including a gate contact; and a MIS conductive inversion channel along the surface of the body region in contact with the gate MIS structure. A lateral current conduction path may be formed in the resurf layer between the source region and the drain region connected by the MIS channel, where the lateral current conduction path is controlled by an applied gate source bias.
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Dang Phuc T
McNeely Bodendorf LLP
Wide Bandgap LLC
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