Integrated circuit with a PN junction diode

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...

Reexamination Certificate

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C257S288000

Reexamination Certificate

active

10950085

ABSTRACT:
Apparatus and Methods for the self-alignment of separated regions in a lateral MOSFET of an integrate circuit. In one embodiment, a method comprising, forming a relatively thin dielectric layer on a surface of a substrate. Forming a first region of relatively thick material having a predetermined lateral length on the surface of the substrate adjacent the relatively thin dielectric layer. Implanting dopants to form a top gate using a first edge of the first region as a mask to define a first edge of the top gate. Implanting dopants to form a drain contact using a second edge of the first region as a mask to define a first edge of the drain contact, wherein the distance between the top gate and drain contact is defined by the lateral length of the first region.

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Webster's II New Riverside University Dictionary, 1994, Riverside Pub., p. 78 and 356.
Disney, D.R. et al., “A new 800V lateral MOSFET with dual conduction paths”, Jun. 2001, ISPS '01, Proc. 13thSym., pp. 399-402.

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