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Formation of a masking layer on a dielectric region to...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Formation of electrical contacts to conductive elements in...

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Formation of interconnect structures by removing sacrificial...

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Formation of ohmic contacts in III-nitride light emitting...

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Formation of oxidation-resistant seed layer for interconnect...

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Formation of silicided junctions in deep submicron MOSFETS by de

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Forming a porous dielectric layer

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Forming local interconnects in integrated circuits

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Forming of the last metallization level of an integrated...

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Forming thick metal interconnect structures for integrated...

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Freestanding multilayer IC wiring structure

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Fretting and whisker resistant coating system and method

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Fully encapsulated metal leads for multi-level metallization

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Fuse-structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Fusing nanowires using in situ crystal growth

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Gallium nitride-based III-V group compound semiconductor

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Gallium nitride-based III-V group compound semiconductor

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Gallium nitride-based III-V group compound semiconductor

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Gallium nitride-based III-V group compound semiconductor...

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GaN-based III—V group compound semiconductor device...

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