Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-10-02
2007-10-02
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S486000, C257S740000, C257S767000, C257SE21006, C257SE23162, C438S570000, C438S580000
Reexamination Certificate
active
11308284
ABSTRACT:
An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present invention, a hydrogen plasma treatment is used to treat a noble metal seed layer such that the treated noble metal seed layer is highly resistant to surface oxidation. The inventive oxidation-resistant noble metal seed layer has a low C content and/or a low nitrogen content.
REFERENCES:
patent: 5486282 (1996-01-01), Datta et al.
patent: 6432821 (2002-08-01), Dubin et al.
patent: 6881318 (2005-04-01), Hey et al.
patent: 2004/0084773 (2004-05-01), Johnston et al.
Hon Wong Keith Kwong
Klymko Nancy R.
Parks Christopher C.
Yang Chih-Chao
International Business Machines - Corporation
Jaklitsch, Esq. Lisa
Pert Evan
Scully , Scott, Murphy & Presser, P.C.
Wilson Scott R.
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