Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-01-14
2010-12-28
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S748000, C257S099000, C257SE21476, C438S653000
Reexamination Certificate
active
07859109
ABSTRACT:
The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer.
REFERENCES:
patent: 6326294 (2001-12-01), Jang et al.
patent: 2002/0014630 (2002-02-01), Okazaki et al.
patent: 2003/0001170 (2003-01-01), Shibata et al.
patent: 2003/0015721 (2003-01-01), Slater et al.
patent: 2003/0209720 (2003-11-01), Okazaki et al.
patent: 0926744 (1999-06-01), None
patent: 1168460 (2002-01-01), None
patent: 11-40846 (1999-02-01), None
patent: 2000-36619 (2000-02-01), None
patent: 2000-294837 (2000-10-01), None
patent: 0147038 (2001-06-01), None
patent: WO 02/099901 (2002-12-01), None
D. L. Hibbard, et al. “Low resistance High Reflectance Contacts to p-GaN Using Oxidized Ni/Au and Al or Ag”, Applied Physics Letters, vol. 83, No. 2, Jul. 14, 2003. pp. 311-313.
European Search Report dated Apr. 10, 2008.
English language abstract of Japanese Publication No. 11-40846.
English language abstract of Japanese Publication No. 2000-36619.
English language abstract of Japanese Publication No. 2000-294837.
H.C. Park & Associates PLC
Nguyen Thinh T
Postech Academy-Industry Foundation
Seoul Opto-Device Co., Ltd.
LandOfFree
Gallium nitride-based III-V group compound semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium nitride-based III-V group compound semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride-based III-V group compound semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4183675