Gallium nitride-based III-V group compound semiconductor

Details Gallium nitride-based III-V group compound semiconductor Gallium nitride-based III-V group compound semiconductor

1996-06-17

1998-06-16

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 76, 257 79, 257 86, 257615, 257744, 257764, 257765, 257766, 257769, 257431, H01L 2978

Patent

active

057675813

ABSTRACT:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

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