Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257 76, 257 79, 257 86, 257615, 257744, 257764, 257765, 257766, 257769, 257431, H01L 2978

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057675813

ABSTRACT:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

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