Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-05-15
2007-05-15
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S487000
Reexamination Certificate
active
11077830
ABSTRACT:
Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.
REFERENCES:
patent: 6538801 (2003-03-01), Jacobson et al.
patent: 6720240 (2004-04-01), Gole et al.
Thomas P. Nielsen, et al., “Review: Deposition of Ceramis Thin Films at Low Temperatures from Aqueous Solutions”, J. Electroceramics, 6, 2001, pp. 169-207.
Lincoln J. Lauhon, et al., “Epitaxial Core-shell and Core-Multishell Nanowire Heterostructures”, Letter to Nature, Nature, vol. 420, Nov. 7, 2002, pp. 57-61.
Scott Wood, “Precipitation and Dissolution”, http://www.sci.uidaho.edu/geol478—578/PDF/Lectures/GEOL578-Lecture4.PDF, pp. 1-54.
Haubrich Scott
Jeon Yoocharn
Ng Hou T.
Pan Alfred
Dang Phuc T.
Hewlett--Packard Development Company, L.P.
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