Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-10-22
2009-06-02
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S529000, C257S775000, C257SE23149
Reexamination Certificate
active
07541676
ABSTRACT:
A metal layer structure is disclosed. The metal layer structure includes a substrate, a first dielectric layer on a surface of the substrate, and at least one first conductor and at least one second conductor on the first dielectric layer. The second conductor has at least one thin portion.
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Lee Chiu-Te
Wu Te-Yuan
Hsu Winston
United Microelectronics Corp.
Warren Matthew E.
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