Fuse-structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S529000, C257S775000, C257SE23149

Reexamination Certificate

active

07541676

ABSTRACT:
A metal layer structure is disclosed. The metal layer structure includes a substrate, a first dielectric layer on a surface of the substrate, and at least one first conductor and at least one second conductor on the first dielectric layer. The second conductor has at least one thin portion.

REFERENCES:
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patent: 5882998 (1999-03-01), Sur et al.
patent: 6175145 (2001-01-01), Lee et al.
patent: 6194304 (2001-02-01), Morozumi
patent: 6356496 (2002-03-01), Carroll
patent: 6375159 (2002-04-01), Daubenspeck et al.
patent: 6707129 (2004-03-01), Wang
patent: 6828653 (2004-12-01), Castagnetti et al.
patent: 6900515 (2005-05-01), Fischer et al.
patent: 2005/0110148 (2005-05-01), Lee et al.

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