Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-05-20
2011-10-04
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S741000, C257S750000, C257S763000, C257S764000, C257SE21021, C257SE21023, C257SE21024, C257SE21025
Reexamination Certificate
active
08030772
ABSTRACT:
Devices are presented including: a substrate including a dielectric region and a conductive region; a molecular self-assembled layer selectively formed on the dielectric region; and a capping layer formed on the conductive region, where the capping layer is an electrically conductive material such as: an alloy of cobalt and boron material, an alloy of cobalt, tungsten, and phosphorous material, an alloy of nickel, molybdenum, and phosphorous. In some embodiments, devices are presented where the molecular self-assembled layer includes one or more of a polyelectrolyte, a dendrimer, a hyper-branched polymer, a polymer brush, a block co-polymer, and a silane-based material where the silane-based material includes one or more hydrolysable substituents of a general formula RnSiX4-n, where R is: an alkyl, a substituted alkyl, a fluoroalkyl, an aryl, a substituted aryl, and a fluoroaryl, and where X is: a halo, an alkoxy, an aryloxy, an amino, an octadecyltrichlorosilane, and an aminopropyltrimethoxysilane.
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Boussie Thomas R.
Lazovsky David E.
Malhotra Sandra G.
Au Bac
Intermolecular, Inc.
Picardat Kevin M
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