Gallium nitride-based III-V group compound semiconductor

Details Gallium nitride-based III-V group compound semiconductor Gallium nitride-based III-V group compound semiconductor

1997-12-19

1999-03-02

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 76, 257 78, 257 86, 257615, 257744, 257764, 257765, 257766, 257769, 257431, H01L 2978

Patent

active

058775587

ABSTRACT:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

REFERENCES:
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4495514 (1985-01-01), Lawrence et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5285078 (1994-02-01), Mimura et al.
M.E. Lin et al. "Low resistance ohmic contacts on wide band-gap GaN" Appl. Phys. Lett. 64(8) 21 Feb. 1994, pp. 1003-1005.
B. Goldenberg et al. "Ultraviolet and violet light-emitting. . . " Appl. Phys. Letts. 62 (1993), 25 Jan. No. 4, New York, US, pp. 381-383.
J.S. Foresi et al. "Metal contacts to gallium nitride" Appl. Phys. Letts. 62(1993) 31 May, No. 22, New York, US, pp. 2859-2861.
I. Akasaki et al. "High efficiency UV . . . " Proc. Of the SPIE; Phys. Concepts of Materials . . . 28 Oct. 1990, Aachen, DE, pp. 138-149.
M. Asif Khan et al. "Metal semiconductor field effect . . . " Appl. Phys. Letts. 62(15), 12 Apr. 1993, pp. 1786-1787.
S. Nakamura et al. "High-power InGan/Gan . . . " Appl. Phys. Letts. 62(19), 10 May 1993, pp. 2390-2392.
H. Morkoc et al. "Large-band-gap SIC, . . . " J. Phys. 76(3), 1 Aug. 1994, pp. 1363-1398.
Patent Abstracts of Japan, vol. 18 No. 80 (E-1505) 9 Feb. 1994 & JP-A-05 291 621 (Nichia chem Ind Ltd) 5 Nov. 1993. See abstract.
Database WPI, Week 9444, Derwent Publications Ltd., London, GB, AN 94-352820 & JP A-6 275 868 (Nichia Kagaku Kogyo KK) 30 Sep. 1994, see abstract.
Database WPI, Week 9438, Derwent Publications Ltd., London, GB. AN 94-308360 & JP A-6 237 012 (Nichia Kagaku Kogyo KK) 23 Aug. 1994, see abstract.
Kahn et al. "Metal semiconductor field . . . " Appl. Phys. Lett. 62(15), 12 Apr. 1993.

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