Forming thick metal interconnect structures for integrated...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C438S618000

Reexamination Certificate

active

07964965

ABSTRACT:
Embodiments of an apparatus and methods for forming thick metal interconnect structures for integrated structures are generally described herein. Other embodiments may be described and claimed.

REFERENCES:
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“Wafer-Level Packaging Has Arrived”, Dr. Philip Garrou, IEEE Components, Packaging and Manufacturing Technologies Society—Semiconductor International, Oct. 1, 2000, 8 pgs. Also found at http://www.semiconductor.net/article/CA47705.html.
“Interconnect Structure for a Microelectronic Device, Method of Manfacturing Same, and Microelectronic Structure Containing Same”, Michael Goodner, et al., U.S. Appl. No. 11/946,599, filed Nov. 28, 2007.
“Systems and Methods to Passivate On-Die Redistribution Interconnects”, Jun He, et al., U.S Appl. No. 11/595,645, filed Nov. 8, 2005.

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