Formation of silicided junctions in deep submicron MOSFETS by de

Details Formation of silicided junctions in deep submicron MOSFETS by de Formation of silicided junctions in deep submicron MOSFETS by de

1996-11-05

1998-07-14

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257757, 257768, 257383, 257384, H01L 23532, H01L 2943

Patent

active

057809291

ABSTRACT:
Deep submicran mosfets with defect enhanced CoSi2 formation and improved silicided junctions. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.

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Ditusa et al., Quantum Transport in Ultrathin CoSi.sub.2 Epitaxial Films, Appl. Phys. Lett., vol. 57, No. 5, 30 Jul. 1990, pp. 452-454.
Lasky et al., Comparison of Transformation to Low-Resistivity Phase and Agglomeration of TiSi.sub.2 and CoSi.sub.2, IEEE Trans on Electron Devices, vol. 38, No. 2, Feb. 1999, pp. 262-269.
"Shallow Junction Formation By The Redistribution Of Species Implanted Into Cobalt Silicide", Ditchek et al., MRS Proceedings, vol. 92, pp. 199-201.
J.Y. Veuillen et al., "CO/SI(111) Interface Formation of an Initial COSI2 Phase at Room Temperature", Applied Physics Letters, vol. 51, No. 18, 2 Nov. 1987, New York, pp. 1448-1450.
"Application of Self-Aligned COSI2 Interconnection in Submicrometer CMOS Transistors", E.K. Broadbent et al. IEEE Transactions on Electron Devices vol. 36, No. 11, Nov. 1989, New York pp. 2440-2446.

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