Freestanding multilayer IC wiring structure

Details Freestanding multilayer IC wiring structure Freestanding multilayer IC wiring structure

1998-04-22

2000-08-01

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257619, 257773, 257522, H01L 2348, H01L 2906, H01L 2900

Patent

active

060970928

ABSTRACT:
A dielectric wiring structure and method of manufacture therefor. Successively formed wiring layers synergistically combine with subsequently formed sidewall supports spanning two or more layers to form a self supporting air dielectric interconnection matrix. Wires are supported by vertical nitride sidewalls which are, in turn, held in place and supported by the wires. After forming the complete wiring-sidewall structure, SiO.sub.2 between and under the wires is removed using gaseous HF at a partial pressure between 5 and 30 Torr. The metal wires may be clad with nitride for short and oxidation protection. Because sidewalls are formed after wiring, with the wiring at each level providing support definition, complex support alignment is unnecessary.

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