Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-04-25
2006-04-25
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S508000, C257S759000, C257S760000, C257S774000
Reexamination Certificate
active
07034399
ABSTRACT:
A dielectric layer is made porous by treating the dielectric material after metal interconnects are formed in or through that layer. The porosity lowers the dielectric constant of the dielectric material. The dielectric material may be subjected to an electron beam or a sonication bath to create the pores. The structure has smooth sidewalls for metal interconnects extending through the dielectric layer.
REFERENCES:
patent: 5218472 (1993-06-01), Jozefowicz et al.
patent: 5847443 (1998-12-01), Cho et al.
patent: 6331493 (2001-12-01), Sharan
patent: 6387818 (2002-05-01), Lopatin
patent: 6436810 (2002-08-01), Kumar et al.
patent: 6596467 (2003-07-01), Gallagher et al.
patent: 6815332 (2004-11-01), San et al.
patent: 2003/0001240 (2003-01-01), Whitehair et al.
patent: 2003/0054115 (2003-03-01), Alabano et al.
patent: 2003/0111263 (2003-06-01), Fornof et al.
patent: 2003/0114013 (2003-06-01), Hedrick et al.
patent: 2003/0218253 (2003-11-01), Avanzino et al.
patent: 2004/0061231 (2004-04-01), He et al.
patent: 2004/0087166 (2004-05-01), Morrow
patent: 2004/0121586 (2004-06-01), Abell
patent: 2004/0137831 (2004-07-01), Kollodge et al.
patent: 2005/0038276 (2005-02-01), Laxman et al.
Brask Justin K.
Bruner Donald
Goodner Michael D.
Kloster Grant M.
O'Brien Kevin P.
Soward Ida M.
Trop Pruner & Hu P.C.
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