LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Epitaxial system

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Epitaxial wafer and a method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Epitaxial wafer and method for producing epitaxial wafers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Epitaxial wafer substantially free of grown-in defects

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxial-wafer fabricating process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxially coated semiconductor wafer and process for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxially coated semiconductor wafers having low-oxygen zone o

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxially coated silicon wafer and method for producing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Epitaxy layer and method of forming the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxy with compliant layers of group-V species

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

Epitaxy with reusable template

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Equipment and method for manufacturing silicon carbide...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Equipment for producing silicon single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Esrf source for ion plating epitaxial deposition

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Etch process for single crystal silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Etch selectivity enhancement for tunable etch resistant...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Etch stop layer system

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Etch stop layer system

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Evaluation process of reactivity of silica glass with...