Epitaxy layer and method of forming the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Reexamination Certificate

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C117S094000, C117S095000, C117S101000, C117S104000

Reexamination Certificate

active

10847099

ABSTRACT:
A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si—Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si—Ge layer containing 5 to 10% germanium.

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Li et al. “Wavy interface morphologies in strained SiGe/Si multilayers on vicinal Si (111) substrates”, Journal of Physics Condense Matter vol. 10, 1998 pp. 8643-8652.

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