Epitaxy layer and method of forming the same

Details Epitaxy layer and method of forming the same Epitaxy layer and method of forming the same

2007-02-13

2007-02-13

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S094000, C117S095000, C117S101000, C117S104000

Reexamination Certificate

active

10847099

ABSTRACT:
A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si—Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si—Ge layer containing 5 to 10% germanium.

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