Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2006-06-13
2006-06-13
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S103000, C117S106000, C117S108000, C117S097000, C117S094000, C117S092000
Reexamination Certificate
active
07060131
ABSTRACT:
The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is suppressed and thus dislocation defects do not form. In the first step, the surface of the first group III-V crystal (substrate) is cleansed by desorption of surface oxides. In the second step, a layer of condensed group-V species is condensed on the surface of the first group III-V crystal. In the third step, a mono-layer of constituent group-III atoms is deposited over the layer of condensed group-V species in order for the layer of constituent group-III atoms to retain the condensed group-V layer. Subsequently, the mono-layer of group-III atoms is annealed at a higher temperature. In the fourth step, bulk of the second group III-V crystal is grown with the condensed group-V layer accommodating the strain build-up which occurs during the bulk growth.
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HRL Laboratories LLC
Kunemund Robert
Ladas & Parry LLP
Song Matt
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