Equipment and method for manufacturing silicon carbide...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S094000, C117S095000, C117S101000, C117S104000, C118S715000

Reexamination Certificate

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10814179

ABSTRACT:
A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.

REFERENCES:
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patent: 6030661 (2000-02-01), Kordina et al.
patent: 6770137 (2004-08-01), Hara et al.
patent: 6830618 (2004-12-01), Hara et al.
patent: 2002/0056412 (2002-05-01), Hara et al.
patent: 2004/0231583 (2004-11-01), Hara et al.
patent: A-05-032484 (1993-02-01), None
patent: A-2002-362998 (2002-12-01), None
patent: WO 98/14644 (1998-04-01), None
Notice of Reason for Refusal from Japanese Patent Office issued on Oct. 17, 2006 for the corresponding Japanese patent application No. 2003-102016 (a copy and English translation thereof).
Notice of Reason for Refusal from Japanese Patent Office Issued on Jun. 6, 2006 for the corresponding Japanese patent application No. 2003-102016 (a copy and English translation thereof).
Notice of Reason for Refusal from Japanese Patent Office issued on Jun. 6, 2006 for the corresponding Japanese patent application No. 2003-139387 (a copy and English translation thereof).

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