Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1996-07-01
1998-03-10
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117 30, 117200, 117917, C30B 3500
Patent
active
057256616
ABSTRACT:
An equipment for producing silicon single crystals based on an MCZ method, which enables an operator to be protected from dangerous exposure to magnetic field without involving increase in the size of the silicon single crystal production equipment. In the silicon single crystal production equipment based on the MCZ method, a growth furnace control apparatus for control of a pulling apparatus is located away from the pulling apparatus by a predetermined distance so that the intensity of magnetic field immediately close to the growth furnace control apparatus can become 300 gausses or less. A monitoring camera for observing the growing condition of the silicon single crystal is mounted to a window 5a of a growth furnace to be operatively connected to a monitor of the growth furnace control apparatus and to cause the growth furnace control apparatus to control the pulling apparatus on a remote control basis. In an experimental example, an accumulated magnetic field exposure value immediately close to the growth furnace control apparatus can be suppressed to less than 30% of its allowable maximum value and therefore the operator can continuously work highly safely.
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Arai Masayuki
Fusegawa Izumi
Hayashi Toshiro
Ohta Tomohiko
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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