Epitaxial wafer and method for producing epitaxial wafers

Details Epitaxial wafer and method for producing epitaxial wafers Epitaxial wafer and method for producing epitaxial wafers

2011-01-25

2011-01-25

Kunemund, Robert M. (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S045000, C117S054000, C117S056000

Reexamination Certificate

active

07875115

ABSTRACT:
This disclosure is aimed at providing a method for producing an epitaxial wafer allowing uniform occurrence of oxygen precipitate in a substrate plane in the radial direction in a base plate and excelling in the crystal quality of an epi-layer.A method for the production of an epitaxial wafer, characterized by using as a substrate a base plate of nitrogen- and carbon-added silicon single crystal having a nitrogen concentration of 5×1014to 5×1015atoms/cm3and a carbon concentration of 1×1016to 1×1018atoms/cm3, having a crystal growth condition during the production of silicon single crystal in a range in which the whole surface of substrate becomes an OSF region, and being pulled at a cooling speed of not less than 4° C./minute between 1100 and 1000° C. during the growth of crystal, and depositing the silicon single crystal layer on the surface of the substrate by the epitaxial method.

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