Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1992-05-06
1994-10-18
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117935, C30B 2502
Patent
active
053558316
ABSTRACT:
For the production of high-quality electronic components based on semiconductors, semiconductor wafers are needed which have a substantially lower oxygen concentration in the wafer region near the surface in which the components are integrated than in the other wafer region. This region, known as "denuded zone," was hitherto obtained by prolonged heat treatment of the wafers in a batch reactor as a consequence of partial diffusion of the oxygen out from the substrate. In the process according to the invention, the low-oxygen region is produced by the epitaxial deposition of two differently doped semiconductor layers on the wafer surface in a single-wafer reactor.
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Kunemund Robert
Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
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