Etch process for single crystal silicon

Details Etch process for single crystal silicon Etch process for single crystal silicon

1996-07-16

1998-12-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 92, 216 64, 216 79, C30B 2300

Patent

active

058432264

ABSTRACT:
A process for etching shallow trenches in single crystal silicon is described. The process etchant comprises HBr/Cl.sub.2 /O.sub.2 /He. The process can be used with various mask 24 schemes including, for example, photoresists, oxide hardmasks and nitride hardmasks. The process forms shallow trenches 32 typically having a width of from about 0.25 microns to about 1 micron, and a depth of from about 0.3 microns to about 1 micron. The shallow trenches 32 have rounded bottom corners 38, smooth and continuous sidewalls 34 and substantially flat and clean bottoms 36. For a given trench width, the profile angle is substantially uniform across the single crystal silicon. The trench depth is substantially uniform across the silicon also. In addition, the profile angle is substantially independent of the trench depth. The process can comprise one or two etch steps for etching the single crystal silicon. The two-step etch process forms shallow trenches having varying profile angles with respect to the trench depth.

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