Etch stop layer system

Details Etch stop layer system Etch stop layer system

2000-06-22

2004-02-10

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S097000, C117S915000, C117S939000

Reexamination Certificate

active

06689211

ABSTRACT:

BACKGROUND OF THE INVENTION
The invention relates to the field of etch-stop material systems on monocrystalline silicon.
Microelectromechanical systems (MEMS) form the bridge between conventional microelectronics and the physical world. They serve the entire spectrum of possible applications. MEMS include such varied devices as sensors, actuators, chemical reactors, drug delivery systems, turbines, and display technologies. At the heart of any MEMS is a physical structure (a membrane, cantilever beam, bridge, arm, channel, or grating) that is “micromachined” from silicon or some other electronic material. Since MEMS are of about the same size scale and, ideally, fully integrated with associated microelectronics, naturally they should capitalize on the same materials, processes, equipment, and technologies as those of the microelectronics industry. Because the process technology for silicon is already extensively developed for VLSI electronics, silicon is the dominant material for micromachining. Silicon is also mechanically superior to compound semiconductor materials and, by far, no other electronic material has been as thoroughly studied.
A wide array of micromachined silicon devices are fabricated using a high boron concentration “etch-stop” layer in combination with anisotropic wet etchants such as ethylenediamine and pyrocatechol aqueous solution (EDP), potassium hydroxide aqueous solution (KOH), or hydrazine (N
2
H
2
). Etch selectivity is defined as the preferential etching of one material faster than another and quantified as the ratio of the faster rate to the slower rate. Selectivity is realized for boron levels above 10
19
cm
−3
, and improves as boron content increases.
It should be noted that etch stops are also used in bond and etch-back silicon on insulator (BESOI) processing for SOI microelectronics. The etch-stop requirements differ somewhat from those of micromachining, e.g., physical dimensions and defects, but the fundamentals are the same. Hence, learning and development in one area of application can and should be leveraged in the other. In particular, advances in relaxed SiGe alloys as substrates for high speed electronics suggests that a bond-and-etch scheme for creating SiGe-on-insulator would be a desirable process for creating high speed and wireless communications systems.
SUMMARY OF THE INVENTION
Accordingly, the invention provides a SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si
1−x
Ge
x
alloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in composition. The etch stop is used for micromachining by aqueous anisotropic etchants of silicon such as potassium hydroxide, sodium hydroxide, lithium hydroxide, ethylenediamine/pyrocatechol/pyrazine (EDP), TMAH, and hydrazine. For example, a cantilever can be made of this etch-stop material system, then released from its substrate and surrounding material, i.e., “micromachined”, by exposure to one of these etchants. These solutions generally etch any silicon containing less than 7×10
19
cm
−3
of boron or undoped Si
1−x
Ge
x
alloys with x less than approximately 18.
Alloying silicon with moderate concentrations of germanium leads to excellent etch selectivities, i.e., differences in etch rate versus pure undoped silicon. This is attributed to the change in energy band structure by the addition of germanium. Furthermore, the nondegenerate doping in the Si
1−x
Ge
x
alloy should not affect the etch-stop behavior.
The etch-stop of the invention includes the use of a graded-composition buffer between the silicon substrate and the SiGe etch-stop material. Nominally, the buffer has a linearly-changing composition with respect to thickness, from pure silicon at the substrate/buffer interface to a composition of germanium, and dopant if also present, at the buffer/etch-stop interface which can still be etched at an appreciable rate. Here, there is a strategic jump in germanium and concentration from the buffer side of the interface to the etch-stop material, such that the etch-stop layer is considerably more resistant to the etchant.
In accordance with the invention there is provided a monocrystalline etch-stop layer system for use on a monocrystalline Si substrate. In one embodiment of the invention, the system includes a substantially relaxed graded layer of Si
1−x
Ge
x
, and a uniform etch-stop layer of substantially relaxed Si
1−y
Ge
y
. In another embodiment of the invention, the system includes a substantially relaxed graded layer of Si
1−x
Ge
x
, a uniform etch-stop layer of substantially relaxed Si
1−y
Ge
y
, and a strained Si
1−z
Ge
z
layer. In yet another embodiment of the invention, the system includes a substantially relaxed graded layer of Si
1−x
Ge
x
, a uniform etch-stop layer of substantially relaxed Si
1−y
Ge
y
, a second etch-stop layer of strained Si
1−z
Ge
z
, and a substantially relaxed Si
1−w
Ge
w
layer.
In accordance with the invention there is also provided a method of integrating device or layer. The method includes depositing a substantially relaxed graded layer of Si
1−x
Ge
x
on a Si substrate; depositing a uniform etch-stop layer of substantially relaxed Si
1−y
Ge
y
on the graded buffer; and etching portions of the substrate and the graded buffer in order to release the etch-stop layer.
In accordance with another embodiment of the invention, there is provided a method of integrating a device or layer. The method includes depositing a substantially relaxed graded layer of Si
1−x
Ge
x
on a Si substrate; depositing a uniform first etch-stop layer of substantially relaxed Si
1−y
Ge
y
on the graded buffer; depositing a second etch-stop layer of strained Si
1−z
Ge
z
; depositing a substantially relaxed Si
1−w
Ge
w
layer; etching portions of the substrate and the graded buffer in order to release the first etch-stop layer; and etching portions of the residual graded buffer in order to release the second etch-stop Si
1−z
Ge
z
layer.


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