Evaluation process of reactivity of silica glass with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

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C117S014000, C117S208000, C117S900000, C065S017300, C065S017400, C065S032100

Reexamination Certificate

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06911080

ABSTRACT:
A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ⅙ seconds.

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patent: 6553787 (2003-04-01), Akiho et al.
patent: 6652934 (2003-11-01), Miyao et al.
patent: 2003/0074920 (2003-04-01), Ohama et al.

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