LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Layer processing

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Layered substrates for epitaxial processing, and device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Lead-based perovskite buffer for forming indium phosphide on...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Light irradiation apparatus, crystallization apparatus,...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Liquid precursor and method for forming a cubic-phase passivatin

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Localized lattice-mismatch-accomodation dislocation network epit

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...

Localized synthesis and self-assembly of nanostructures

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low 1c screw dislocation 3 inch silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low defect axially grown single crystal silicon carbide

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Low defect density epitaxial wafer and a process for the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low defect density/arbitrary lattice constant heteroepitaxial la

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low indium content quantum well structures

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low micropipe 100 mm silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low micropipe 100 mm silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature epitaxial growth of quaternary wide bandgap...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature ion-beam assisted deposition methods for realizi

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature load and bake

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Low temperature load and bake

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature selective growth of silicon or silicon alloys