Layer crystal structure oxide, production method thereof, and me

Details Layer crystal structure oxide, production method thereof, and me Layer crystal structure oxide, production method thereof, and me

1998-09-09

2000-08-22

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117109, 117947, C30B 2306

Patent

active

061066168

ABSTRACT:
A production method of a crystal structure oxide that includes the steps of evaporating the material by heating the material to generate a gas phase and precipitating crystals from the gas phase at a precipitating part so as to produce a layer crystal structure oxide. The precipitating part is provided away from the material in a range of greater than or equal to about 10 mm to about 30 mm.

REFERENCES:
patent: 5453494 (1995-09-01), Kirlin et al.
patent: 5876503 (1999-03-01), Roeder et al.
patent: 5902639 (1999-05-01), Glassman et al.
patent: 5932281 (1999-08-01), Hochido et al.

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