Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-04-06
1998-04-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117954, C30B 2502
Patent
active
057387214
ABSTRACT:
A chemical composition consists essentially ((t-amyl)GaS).sub.4. The chemical composition can be employed as a liquid precursor for metal organic chemical vapor deposition to thereby form a cubic-phase passivating/buffer film, such as gallium sulphide.
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Barron Andrew R.
MacInnes Andrew N.
Power Michael B.
Kunemund Robert
President and Fellows of Harvard College
Triquint Semiconductor, Inc.
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