Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-04-19
1997-05-27
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117108, 117 97, H01L 2120
Patent
active
056331940
ABSTRACT:
A low temperature ion-beam assisted deposition process, comprising the steps of cleaning at least one substrate, subjecting the substrate to a vacuum of at least 2.times.10.sup.-4 Torr, heating the substrate to a temperature of at least 280.degree. C., and directing an ion beam at the substrate, wherein the ion beam comprises ion-associated gas molecules of Si or Ge, so as to grow a thin epitaxial film of Si or Ge on the substrate.
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Brodie D. E.
Mohajerzadeh S.
Selvakumar C. R.
Breneman R. Bruce
Paladugu Ramamohan Rao
The University of Waterloo
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