Low micropipe 100 mm silicon carbide wafer

Details Low micropipe 100 mm silicon carbide wafer Low micropipe 100 mm silicon carbide wafer

2008-01-01

2008-01-01

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Fully-sealed or vacuum-maintained chamber

C117S084000, C438S745000

Reexamination Certificate

active

07314521

ABSTRACT:
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.

REFERENCES:
patent: 4387503 (1983-06-01), Aswell et al.
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4605872 (1986-08-01), Rung
patent: 4777471 (1988-10-01), Comer
patent: 4779126 (1988-10-01), Herman
patent: 4799126 (1989-01-01), Kruse et al.
patent: 4860185 (1989-08-01), Brewer et al.
patent: 4885477 (1989-12-01), Bird et al.
patent: 4894791 (1990-01-01), Jiang et al.
patent: 4910508 (1990-03-01), Yamazaki
patent: 5021861 (1991-06-01), Baliga
patent: RE34861 (1995-02-01), Davis et al.
patent: 5539217 (1996-07-01), Edmond et al.
patent: 5663580 (1997-09-01), Harris et al.
patent: 5883403 (1999-03-01), Ishikawa et al.
patent: 5929482 (1999-07-01), Kawakami et al.
patent: 5944890 (1999-08-01), Kitou et al.
patent: 6657276 (2003-12-01), Karlsson et al.
patent: 6754104 (2004-06-01), King
patent: 2004/0187766 (2004-09-01), Letertre
patent: 2005/0022724 (2005-02-01), Malta et al.
patent: 2005/0022727 (2005-02-01), Fechko et al.
patent: 2005/0126471 (2005-06-01), Jenny et al.
patent: 0967304 (1999-12-01), None
Roland Madar; Materials science: Silicon carbide in contention; Nature; Aug. 26, 2004; vol. 430, pp. 974-975.
Daisuke Nakamura et al.; Ultrahigh-quality silicon carbide single crystals; Nature; Aug. 26, 2004; vol. 430, pp. 1009-1012.
Edward K. Sanchez et al.; Formation of Thermal Decomposition Cavities in Physical Vapor Transport of Silicon Carbide; Journal of Electronic Materials; vol. 29, No. 3 (2000); pp. 347-352.
Adrian Powell et al.; Growth of Low Micropipe Density SIC Wafers; Materials Science Forum; vols. 338-342 (2000); pp. 437-440.
Thomas A. Kuhr et al.; Hexagonal voids and the formation of micropipes during SiC sublimation growth; Journal of Applied Physics; Apr. 15, 2001; vol. 89, No. 8; pp. 4625-4630.
Muller, “Defects in SiC substrates and epitaxial layers affecting seminconductor device performance,” European Physical Journal, Applied Physics EDP Sciences France, vol. 27, No. 1-3, Jul. 2004; pp. 29-35. XP-002376696.

Affiliated with

Also associated with

Rating

Low micropipe 100 mm silicon carbide wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low micropipe 100 mm silicon carbide wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low micropipe 100 mm silicon carbide wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2746641