Low micropipe 100 mm silicon carbide wafer

Details Low micropipe 100 mm silicon carbide wafer Low micropipe 100 mm silicon carbide wafer

2008-01-01

2008-01-01

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Fully-sealed or vacuum-maintained chamber

C117S084000, C438S745000

Reexamination Certificate

active

10957807

ABSTRACT:
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.

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