Low micropipe 100 mm silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Reexamination Certificate

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C117S084000, C438S745000

Reexamination Certificate

active

10957807

ABSTRACT:
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.

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