Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-08-08
2008-12-02
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S090000, C117S103000, C117S904000
Reexamination Certificate
active
07459026
ABSTRACT:
A light irradiation apparatus includes a light modulation element which has a phase step having a phase difference substantially different from 180°, an illumination optical system which illuminates the light modulation element, and an image formation optical system which forms, on an irradiation surface, a light intensity distribution based on a light beam phase-modulated by the light modulation element. The illumination optical system illuminates the light modulation element with an illumination light beam inclined in a direction normal to a step line of the phase step.
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Masayuki Jyumonji, et al. “Arrays of Large Si Grains Grown at Room Temperature for x-Si TFTs”, SID International Symposium Digest of Technical Papers, 2004,vol. XXXV, Book I, pp. 434-437.
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Matsumura Masakiyo
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Hiteshew Felisa C
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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