Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2005-03-29
2005-03-29
Norton, Nadine G. (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C428S643000, C117S095000
Reexamination Certificate
active
06872252
ABSTRACT:
A method of forming a high quality epitaxial indium phosphide layer on a silicon substrate and a semiconductor device formed by the same method are described. In one aspect, a lead-based perovskite buffer is formed on a silicon substrate, and an epitaxial indium phosphide layer is formed on the lead-based perovskite buffer. In accordance with this approach, relatively large (e.g., up to 300 millimeters in diameter) high quality indium phosphide films may be produced with the relatively high mechanical stability provided by silicon substrates. In this way, intrinsic problems associated with prior approaches that involve growth of high quality indium phosphide thin films on indium phosphide substrates, which are characterized by small wafer size, brittleness and high cost, may be avoided.
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Agilent Technologie,s Inc.
Anderson Matthew
Norton Nadine G.
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