Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...
Reexamination Certificate
2007-12-25
2007-12-25
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Forming a platelet shape or a small diameter, elongate,...
C117S088000, C117S095000
Reexamination Certificate
active
11027749
ABSTRACT:
Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano-to micro-integration.
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Christensen Dane
Englander Ongi
Lin Liwei
O'Banion John P.
The Regents of the University of California
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