Low defect density/arbitrary lattice constant heteroepitaxial la

Details Low defect density/arbitrary lattice constant heteroepitaxial la Low defect density/arbitrary lattice constant heteroepitaxial la

1995-06-07

1998-09-22

Niebling, John

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

148DIG67, 148DIG97, H01L 2120, H01L 21203, H01L 21205

Patent

active

058109242

ABSTRACT:
A multi-layered structure and process for forming it arc described, incorporating a single crystal substrate, a plurality of epitaxial layers having graded composition wherein the layers have changing lattice spacings not exceeding about 2 percent per 1000 .ANG. of thickness whereby misfit dislocations are formed to relieve strain and then move to the edges of respective layers. The invention overcomes the problem of large numbers of misfit dislocations threading to the surface of the top layer, especially during device processing at temperatures in a range from 700 to 900 degrees Celsius. Fully relaxed, incommensurate structures having low defect densities are obtained, where arbitrary combinations of materials can be used.

REFERENCES:
patent: 3441453 (1969-04-01), Conrad
patent: 3493811 (1970-02-01), Ewing
patent: 3721583 (1973-03-01), Blakeslee
patent: 3766447 (1973-10-01), Mason
patent: 3821033 (1974-06-01), Hu
patent: 3962716 (1976-06-01), Petroff et al.
patent: 3963538 (1976-06-01), Broadic
patent: 3963539 (1976-06-01), Kemlage
patent: 4088515 (1978-05-01), Blakeslee
patent: 4177321 (1979-12-01), Nishizawa
patent: 4213781 (1980-07-01), Noreika
patent: 4486265 (1984-12-01), Little
patent: 4517047 (1985-05-01), Chang et al.
patent: 4548658 (1985-10-01), Cook
patent: 4636401 (1987-01-01), Yamazaki et al.
patent: 4769341 (1988-09-01), Luryi
patent: 4900372 (1990-02-01), Lee
patent: 4959245 (1990-09-01), Dobson
patent: 4963508 (1990-10-01), Umeno
patent: 5221413 (1993-06-01), Brasen
patent: 5298452 (1994-03-01), Meyerson
patent: 5352912 (1994-10-01), Crabbe et al.
R. Hull et al., A phenomenological description of strain relaxation in Gex Sil-x /Si (100) heterostructures. J. Appl. Phys., 66, 5837 (1989).
L.B. Freund, A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its path, J. Appl. Phys., 68, 2073 (1990).
J.H. van der Merwe, "No Reference", J. Appl. Phys. 34, 117 (1963).
J.W. Matthews et al., "Defects in epitaxial multilayers", J. Crystal Growth, 29, 273, (1975).
B.S. Meyerson et al., "Cooperative growth phenomena in silicon/germanium low-temperture epitaxy", Appl. Phys. Lett., 53, 2555 (1988).
J.W. Matthew et al., "Defects in epitaxial multilayers", J. Crystal. Growth, 32, 265, (1976).
B.W. Dodson, "Dislocation filtering: why it works, when it doesn't", Journ. Electr. Mater. 19, 503 (1990).
R. Hull et al., Role of strained layer superlattices in misfit dislocation reduction in lgrowth of epitaxial Ge0.5 Si0.5 . . . J. appl. Phys., 65, 4723 (1989).
G.L. Patton et al., 75-GHz ft SiGe-Base Heterojunction Biopolar Transistors, Electron. Dev. Letts., 1', 171 (1990).
K. Ismail et al. "High electron mobility in modulation-doped Si/SiGe", Appl. Phys. Lett., 58, 2117 (1991).
B.S. Meyerson et al., "Bistable conditions for low-temperature silicon epitaxy", Appl. Phys. Lett., 57, 1034 (1990).
J.F. Morar et al., "Metallic CaSi2 epitaxial films on Si(111)", Phys. Rev. B, 37, 2618 (1988).
J.M. Cowley, "No Reference" in Advances in Electronics and Electron Physics, 46, 1 (1978).
D.J. Eaglesham et al., "Dislocation nucleation near the critical thickness in GeSi/Si strained layers", Phil. Mag., 59, 1059 (1989).
F.K. LeGoues et al. "Novel strain-induced defect in thin molecular-beam epitaxy layers", Phys. Rev. Lett., 63, 1826 (1989).
R. Hull et al., "Activation barriers to strain relaxation in lattice-mismatched epitaxy", Physical Review B, 40 (3), 1681 (1989).
Kasper et al., "Very Low Temperature MBE Process for SiGe and Si Device Structures", Tech. Digest of the Int'l Electron Devices Mtg, 14 Dec. 1988, San Francisco, CA, US, pp. 558-561.
Osbourn et al., "A GaAs.sub.x P.sub.1-x /GaP Strained-layer Superlattice", Appl. Phys. Lett, 41, 172 (1982).
Von Kanel et al., "Epitaxy of Metal Silicide", vol. 184, No. 1, Jan. 1990, Lausanne, CH. pp. 295-297.

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