Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-06-28
2005-06-28
Norton, Nadine G. (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
Reexamination Certificate
active
06911084
ABSTRACT:
A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.
REFERENCES:
patent: 5766783 (1998-06-01), Utsumi et al.
patent: 5952111 (1999-09-01), Sugg et al.
patent: 6503561 (2003-01-01), Senzaki et al.
Teter, D.M., MRS Bulletin, “Computational Alchemy: The Search for New Superhard Materials”, vol. 23, No. 1, pp. 22-27 (1998).
Morkoc, et al., Journal of Applied Physics, “Large-band-gap SiC, III-V Nitride, and II-VI ZnSe-based Semiconductor Device Technologies”, vol. 76, pp. 1363-1398 (1994).
Tanaka et al., Applied Physics Letters, “Initial Stage of Aluminum Nitride Film Growth on 6H-silicon Carbide by Plasma-assisted, Gas-Source Molecular Beam Epitaxy”, vol. 66, No. 1, pp. 37-39 (1995).
Ruh, et al., Journal of The American Ceramic Society, “Composition and Properties of Hot-Pressed SiC-AIN Solid Solutions”, vol. 65, pp. 260-265 (1982).
Rafaniello, et al., Journal of the American Ceramic Society, “Investigation of Phase Stability in the System SiC-AIN”, vol 66, No. 4, pp. 272-276 (1983).
Zangvil, et al., Journal of the American Ceramic Society, “Phase Relationships in the Silicon Carbide-Aluminum Nitride System”, vol. 71, No. 10, pp. 884-890 (1988).
Parker E.H.C(Ed.), “The Technology and Physics of Molecular Beam Epitaxy”, Chapter 2, pp. 15-46 and Chapter 11, pp. 345-386, Plenum Press (1985).
Kern, et al., Journal of Materials Research, Solid Solutions of AIN and SiC Grown by Plasma-assisted, Gas-source Molecular Beam Epitaxy, vol. 8, No. 7, pp. 1477-1480 (1993).
Kern, et al., Journal of Materials Research, Aluminum Nitride-silicon Carbide Solid Solutions Grown by Plasma-assisted, Gas-source Molecular Beam Epitaxy, vol. 13, No. 7, pp. 1816-1822 (1998).
Jenkins, et al., Journal of Crystal Growth, “Growth of Solid Solutions of Aluminum Nitride and Silicon Carbide by Metalorganic Chemical Vapor Deposition”, vol. 128, Nos. 1-4, pp. 375-378 (1993).
Safaraliev, et al., Soviet Physics Semiconductors, “Wide-gap (SiC)1-x(AIN)xSolid Solutions”, vol. 25, No. 8, pp. 865-871 (1991).
MacDiarmid, Journal of Inorganic and Nuclear Chemistry, “Pseudo-halogen Derivatives of Monosilane”, vol. 2, No. 2, pp. 88-94 (1956).
Goldfarb, The Journal of Chemical Physics, “Infrared Spectrum and Structure of Germyl Cyanide”, vol. 37, No. 3, pp. 642-646 (1962).
Pandey, et al. Journal of Applied Physics, “A Theoretical Study of Stability, Electronic and Optical Properties of GeC and SnC”, vol. 88, No. 11, p. 6462-6466 (2000).
Kouvetakis John
Roucka Radek
Tolle John
Tsong Ignatius S. T.
Anderson Matthew
Arizona Board of Regents
Murray Kitje
Norton Nadine G.
Oney Richard E.
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