Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-05-09
1999-12-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 91, 438266, 438271, 438286, 438291, 148DIG59, C30B 2518
Patent
active
059976381
ABSTRACT:
The present invention is a layered structures of substantially-crystalline semiconductor materials and processes for making such structures. More particularly, the invention epitaxial grows a substantially-crystalline layer of a second elemental semiconductor material on a substantially-crystalline first semiconductor material different from the second material in which there is a significant mismatch in at least one dimension between the crystal-lattice structures of the two materials.
REFERENCES:
patent: 3394289 (1968-07-01), Lindmayer
patent: 4255208 (1981-03-01), Deutscher et al.
patent: 4769341 (1988-09-01), Lurgz
patent: 4843028 (1989-06-01), Herzog et al.
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4907974 (1990-03-01), Gotoh
B.-Y. Tsaur et al. Applied Physics Letters, vol. 38 pp. 779-781 (May 15, 1981).
T. Narusawa and W.M. Gibson Physical Review Letters, vol. 47, pp. 1459-1462 (Nov. 16, 1981).
R.M. Tromp et al. Nuclear Instruments and Methods in Physics Research, vol. B4, pp. 155-166 (1984).
M. Asai et al. Journal of Applied Physics, vol. 58, pp. 2577-2583 (Oct. 1, 1985).
J.F. van den Veen, Surface Science Reports, vol. 5, pp. 199-288, (1985).
R.I.G. Uhrberg et al. Physical Review Letters, vol. 56, pp. 520-523 (Feb. 3, 1986).
J. Bevk et al. Applied Physics Letters, vol. 49, pp. 286-288 (Aug. 4, 1986).
K. Sakamoto et al. Japanese Journal of Applied Physics, vol. 26, pp. 666-670 (May 1987).
M. Zinke-Allmang et al. Journal of Vacuum Science and Technology, vol. A5, pp. 2030-2031 (Jul./Aug. 1987).
R.D. Bringans et al. Physica Scripta, vol. T17, pp. 7-12, (1987).
M. Zinke-Allmang et al. Materials Research Society Symposium Proceedings, vol. 77, pp. 703-708 (1987).
P.M.J. Maree et al. Surface Science, vol. 191, pp. 305-328 (1987).
M. Copel and R.M. Tromp Physical Review B, vol. 37, pp. 2766-2769 (Feb. 15, 1988).
M. Copel et al. Physical Review B, vol. 37 pp. 10756-10763 (Jun. 15, 1988).
F.J. Himpsel et al. Physical Review B, vol. 38 pp. 6084-6096 (Sep. 15, 1988).
G.J. Fisanick et al. Materials Research Society Symposium Proceedings, vol. 102, pp. 25-30 (1988).
H. Jorke Surface Science, vol. 193, pp. 569-578 (1988).
D.A. Steigerwald et al. Surface Science, vol. 202, pp. 472-492 (1988).
E. Kasper and H. Jorke Chemistry and Physics of Solid Surfaces, vol. 7, pp. 557-581 (1988).
C.-Y. Park et al. Japanese Journal of Applied Physics, vol. 27, pp. 147-148 (1988).
S.S. Iyer et al. Applied Physics Letters, vol. 54, pp. 219-221 (Jan. 16, 1989).
M. Copel et al. Physical Review Letters, vol. 63, pp. 632-635 (Aug. 7, 1989).
F.K. Le Goues et al. Physical Review Letters, vol. 63, pp. 1826-1829 (Oct. 23, 1989).
B.S. Meyerson et al. Applied Physics Letters, vol. 53, pp. 2555-2557 (Dec. 19, 1988).
J.C. Tsang et al. Applied Physics Letters, vol. 51, pp. 1732-1734 (Nov. 23, 1987).
M. A. Olmstead et al. Physical Review B, vol. 34, pp. 6041-6044 (Oct. 15, 1986).
Copel Matthew Warren
Kolmer Le Goues Francoise Isabelle
Tromp Rudolf Maria
von Hoegen Michael Horn
International Business Machines - Corporation
Kunemund Robert
Morris Daniel P.
LandOfFree
Localized lattice-mismatch-accomodation dislocation network epit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Localized lattice-mismatch-accomodation dislocation network epit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Localized lattice-mismatch-accomodation dislocation network epit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-819417