Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber
Reexamination Certificate
2008-01-01
2008-01-01
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Fully-sealed or vacuum-maintained chamber
C438S745000
Reexamination Certificate
active
07314520
ABSTRACT:
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2.
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Brady Mark
Leonard Robert T.
Mueller Stephen G.
Powell Adrian
Tsvetkov Valeri F.
Cree Inc.
Hiteshew Felisa
Summa, Allan & Additon, P.A.
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