Use of an etch to reduce the thickness and around the edges...
Use of an insulating spacer to prevent threshold voltage...
Use of an internal on-chip inductor for electrostatic...
Use of an internal on-chip inductor for electrostatic...
Use of an oxide surface to facilitate gate break on a carrier su
Use of an oxide surface to facilitate gate break on a...
Use of argon sputtering to modify surface properties by thin fil
Use of atomic oxygen process for improved barrier layer
Use of axial substituted phthalocyanine compound for...
Use of boron carbide as an etch-stop and barrier layer for...
Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to impr
Use of chained implants in solar cells
Use of chemical-mechanical polishing for fabricating photonic ba
Use of chlorine to fabricate trench dielectric in integrated...
Use of CL2 and/or HCL during silicon epitaxial film formation
Use of Cl2 and/or HCl during silicon epitaxial film formation
Use of conductive adhesive to form temporary electrical...
Use of conductive electrolessly deposited etch stop layers,...
Use of corrosion inhibiting compounds in post-etch cleaning proc
Use of crystalline SiOx barriers for Si-based resonant...